FDPC8012S دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FDPC8012S	دانلود دیتاشیت

RoHS: true
Type: 2PCSNChannel(不对称)
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDPC8012S
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 800mW;900mW
Total Gate Charge (Qg@Vgs): 8nC@4.5V
Drain Source Voltage (Vdss): 25V
Input Capacitance (Ciss@Vds): 1075pF@13V
Continuous Drain Current (Id): 13A;26A
Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@12A,4.5V
Package: PowerClip-33
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Power - Max: 800mW, 900mW
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Powerclip-33
Base Part Number: FDPC8
detail: Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 13A, 26A 800mW, 900mW Surface Mount Powerclip-33